surface mount transient voltage suppressors (tvs) revision october 18, 2013 1 / 4 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. sm8s series 10 to 43 v 6600w un semiconductor co., ltd. www.unsemi.com.tw the sm8s series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. do-218ab u junction passivation optimized design passivated anisotropic rectifier technology u t j =175 c capability suitable for high reliability and automotive requirement u available in uni-directional polarity only u low leakage current u low forward voltage drop u high surge capability u meets iso7637-2 surge specification (varied by test condition) u meets msl level 1, per j-std-020, lf maximum peak of 245 c u aec-q101 qualified u compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec vwm 10v to 43v p ppm (10/1000 s) 6600w p ppm (10 /10000 s) 5200w p d 8w i fsm 700a t j max. 175 c use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection application. parameter symbol value unit with 10/1000 s waveform 6600 peak pulse power dissipation with 10/10000 s waveform p ppm 5200 watts power dissipation on infinite heat sink at t a =25 c (fig.1) p d 8.0 watt peak pulse current with a 10/1000 s waveform i ppm (1) see next table amps peak forward surge current, 8.3ms single half sine wave (note 3) i fsm 700 amps operating junction and storage temperature range t j , t stg - 55 to + 175 c typical thermal resistance, junction to case r jc 0.90 c /watt notes: 1. non-repetitive current pulse derated above t a =25 c maximum ratings and thermal characteristics (t a =25 unless otherwise noted) functional diagram p rimary characteristics uni-direction cathode anode description features applications
surface mount transient voltage suppressors (tvs) revision october 18, 2013 2 / 4 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. sm8s series 10 to 43 v 6600w un semiconductor co., ltd. www.unsemi.com.tw breakdown voltage v br (v) part number stand-off voltage v mw (v) min. max. test current i t (ma) maximum reverse leakage at v wm i d ( a) maximum reverse at v wm t j =175 c id( a) maximum peak pulse current at 10/1000 s waveform (a) maximum clamping voltage at i ppm v c (v) sm8s10 10.0 11.1 13.6 5.0 15 250 351 18.8 sm8s10a 10.0 11.1 12.3 5.0 15 250 388 17.0 sm8s11 11.0 12.2 14.9 5.0 10 150 328 20.1 sm8s11a 11.0 12.2 13.5 5.0 10 150 363 18.2 sm8s12 12.0 13.3 16.3 5.0 10 150 300 22.0 sm8s12a 12.0 13.3 14.7 5.0 10 150 332 19.9 sm8s13 13.0 14.4 17.6 5.0 10 150 277 23.8 sm8s13a 13.0 14.4 15.9 5.0 10 150 307 21.5 sm8s14 14.0 15.6 19.1 5.0 10 150 256 25.8 sm8s14a 14.0 15.6 17.2 5.0 10 150 284 23.2 sm8s15 15.0 16.7 20.4 5.0 10 150 245 26.9 sm8s15a 15.0 16.7 18.5 5.0 10 150 270 24.4 sm8s16 16.0 17.8 21.8 5.0 10 150 229 28.8 sm8s16a 16.0 17.8 19.7 5.0 10 150 254 26.0 sm8s17 17.0 18.9 23.1 5.0 10 150 216 30.5 sm8s17a 17.0 18.9 20.9 5.0 10 150 239 27.6 sm8s18 18.0 20.0 24.4 5.0 10 150 205 32.2 sm8s18a 18.0 20.0 22.1 5.0 10 150 226 29.2 sm8s20 20.0 22.2 27.1 5.0 10 150 184 35.8 sm8s20a 20.0 22.2 24.5 5.0 10 150 204 32.4 sm8s22 22.0 24.4 29.8 5.0 10 150 168 39.4 sm8s22a 22.0 24.4 26.9 5.0 10 150 186 35.5 sm8s24 24.0 26.7 32.6 5.0 10 150 153 43.0 sm8s24a 24.0 26.7 29.5 5.0 10 150 170 38.9 sm8s26 26.0 28.9 35.3 5.0 10 150 142 46.6 SM8S26A 26.0 28.9 31.9 5.0 10 150 157 42.1 sm8s28 28.0 31.1 38.0 5.0 10 150 132 50.1 sm8s28a 28.0 31.1 34.4 5.0 10 150 145 45.4 sm8s30 30.0 33.3 40.7 5.0 10 150 123 53.5 sm8s30a 30.0 33.3 36.8 5.0 10 150 136 48.4 sm8s33 33.0 36.7 44.9 5.0 10 150 112 59.0 sm8s33a 33.0 36.7 40.6 5.0 10 150 124 53.3 sm8s36 36.0 40.0 48.9 5.0 10 150 103 64.3 sm8s36a 36.0 40.0 44.2 5.0 10 150 114 58.1 sm8s40 40.0 44.4 54.3 5.0 10 150 92.4 71.4 sm8s40a 40.0 44.4 49.1 5.0 10 150 102 64.5 sm8s43 43.0 47.8 58.4 5.0 10 150 86 76.7 sm8s43a 43.0 47.8 52.8 5.0 10 150 95.1 69.4 note: for all types maximum v f = 1.8v at i f = 100a measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. electrical characteristics (t a =25 unless otherwise noted)
surface mount transient voltage suppressors (tvs) revision october 18, 2013 3 / 4 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. sm8s series 10 to 43 v 6600w un semiconductor co., ltd. www.unsemi.com.tw figure 1 C power derating curve figure 3 - pu lse w a veform ratings and characteristic curves ( t a =25 c unless otherwise noted ) figure 4 C reverse power capability figure 5 - typical transient thermal impedance figure 2 - load dump power characteristics (10 ms exponential waveform) figur e 6 - typical junction capacitance
surface mount transient voltage suppressors (tvs) revision october 18, 2013 4 / 4 @ un semiconductor co., ltd. 2013 specifications are subject to change without notice. please refer to www.unsemi.com.tw for current information. sm8s series 10 to 43 v 6600w un semiconductor co., ltd. www.unsemi.com.tw case do-218ab molding compound meets ul 94 v-0 flammability rating base p/n he3 - rohs compliant, aec-q101 qualified polarity heat sink is anode terminal matte tin plated leads, solderable per j-std-002 and jesd 22-b102 he3 suffix meets jesd 201 class 2 whisker test preferred p/n unit weight (g) preferred package code base quantity delivery mode sm8s10ahe3/2d (1) 2.605 2d 750 13" diameter plastic tape and reel, anode towards the sprocket hole note: (1) aec-q101 qualified mechanical data p ackage outline dimensions unit: inches (millimeters) ordering information (example) part numbering sm8s a 5% v br voltage tolerance v r voltage series
|
